量子材料与器件研究中心

教授,博士生导师,国家高层次青年人才
地址:湖北省武汉市武昌区八一路299号
邮编:430072
个人简介:
2012年获西北工业大学理学学士学位,2017年获北京大学理学博士学位(导师:张艳锋教授/刘忠范院士),2017-2019年在北京大学从事博雅博士后研究。2019年12月至今就职于17吃瓜 ,独立建组开展二维半导体材料和芯片研究工作。
研究方向:二维半导体材料,亚纳米先进制程芯片设计,钠/锂离子电池等
围绕后摩尔时代集成电路特征尺寸进入量子极限,能耗瓶颈、算力瓶颈日益明显的挑战,开展“二维半导体设计与制造-表/界面结构与物性调控-亚纳米先进制程芯片构筑”全链条研究。发展突破尺寸微缩极限的新材料与新器件,研制面向亚纳米先进制程芯片,打造自主可控的二维半导体芯片制造技术新赛道。
研究成果:
面向后摩尔时代国家对“集成电路与高端芯片”领域中新型电子材料的重大需求,针对二维半导体的载流子迁移率低、器件功能集成复杂等科学问题。本课题组以高迁移率、多功能新型二维电子器件的研制为目标,围绕二维半导体晶圆的原子制造和精准掺杂,以及二维铁电/多铁材料的设计开展研究。以通讯/第一作者发表论文60余篇(包含Nature子刊3篇, Adv. Mater./J. Am. Chem. Soc. 16篇, Nano Lett./ACS Nano 15篇等);承担国家自然科学基金重大研究计划、国家自然科学基金重点项目、科技部重点研发计划等国家/省部级科研项目10余项;入选国家高层次青年人才、湖北省高层次人才、湖北省杰青等人才计划。
代表性论文:
1. R. F. Du, Y. Z. Wang, M. Cheng, P. Wang, H. Li, W. Feng, L. Y. Song, J. P. Shi*, and J. He*. Two-dimensional multiferroic material of metallic p-doped SnSe. Nat. Commun. 2022, 13, 6130.
2. L. Y. Song, Y. Zhao, B. Q. Xu, R. F. Du, H. Li, W. Feng, J. B. Yang, X. H. Li, Z. J. Liu, X. Wen, Y. N. Peng, Y. Z. Wang, H. Sun, L. Huang, Y. L. Jiang, Y. Cai, X. Jiang, J. P. Shi*, and J. He*. Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide. Nat. Commun. 2024, 15, 721.
3. H. Li, M. Cheng, P. Wang, R. F. Du, L. Y. Song, J. He, and J. P. Shi*. Reducing contact resistance and boosting device performance of monolayer MoS2 by in situ Fe doping. Adv. Mater. 2022, 34, 2200885.
4. Y. Z. Wang, P. Wang, H. Wang, B. Q. Xu, H. Li, M. Cheng, W. Feng, R. F. Du, L. Y. Song, X. Wen, X. H. Li, J. B. Yang, Y. Cai, J. He, Z. X. Wang, and J. P. Shi*. Room-temperature magnetoelectric coupling in atomically thin ε-Fe2O3. Adv. Mater. 2023, 35, 2209465.
5. X. Wen, W. Feng, X. H. Li, J. B. Yang, R. F. Du, P. Wang, H. Li, L. Y. Song, Y. Z. Wang, M. Cheng, J. He, and J. P. Shi*. Diatomite-templated synthesis of single-atom cobalt-doped MoS2/carbon composites to boost sodium storage. Adv. Mater. 2023, 35, 2211690.
6. H. Li, J. B. Yang, X. H. Li, Q. K. Luo, M. Cheng, W. Feng, R. F. Du, Y. Z. Wang, L. Y. Song, X. Wen, Y. Wen, M. M. Xiao, L. Liao, Y. F. Zhang, J. P. Shi*, and Jun He*. Bridging synthesis and controllable doping of monolayer 4 in. length transition-metal dichalcogenides single crystals with high electron mobility. Adv. Mater. 2023, 35, 2211536.
7. X. H. Li, J. B. Yang, H. Sun, L. Huang, H. Li, and J. P. Shi*. Controlled synthesis and accurate doping of wafer-scale 2D semiconducting transition metal dichalcogenides. Adv. Mater. 2025, 37, 2305115.
8. Y. H. Li, X. Wen, Y. N. Li, Y. L. Jiang, X. H. Li, Z. Du, H. Sun, Y. N. Peng, L. Y. Song, R. H. Xu, L. Huang, C. X. Xiao, and J. P. Shi*. P-band center engineering of sulfur to weaken Fe-S bond toward superior sodium-ion storage. Adv. Mater. 2025, 37, 2506071.
9. M. Cheng, X. X. Zhao, Y. Zeng, P. Wang, Y. Z. Wang, T. Wang, S. J. Pennycook, J. He, and J. P. Shi*. Phase-tunable synthesis and etching-free transfer of two-dimensional magnetic FeTe. ACS Nano 2021, 15, 19089-19097.
10. P. Wang, Y. Wen, X. X. Zhao, B. X. Zhai, R. F. Du, M. Cheng, Z. Liu, J. He, and J. P. Shi*. Controllable synthesis quadratic-dependent unsaturated magnetoresistance of two-dimensional nonlayered Fe7S8 with robust environmental stability. ACS Nano 2022, 16, 8301-8308.
11. R. H. Xu, L. Y. Song, X. H. Li, Z. Du, C. X. Xiao, H. Sun, Y. N. Peng, L. Huang, Y. L. Jiang, Y. N. Li, Y. H. Li, J. He, and J. P. Shi*. A two-dimensional NiS/MoS2 metal-semiconductor vertical heterojunction for a sub-100 nm transistor. ACS Nano 2025, 19, 25870-25878.
12. P. Wang, J. Ge, J. W. Luo, H. Wang, L. Y. Song, Z. W. Li, J. B. Yang, Y. Z. Wang, R. F. Du, W. Feng, J. Wang, J. He, and J. P. Shi*. Interisland-distance-mediated growth of centimeter-scale two-dimensional magnetic Fe3O4 arrays with unidirectional domain orientations. Nano Lett. 2023, 23, 1758-1766.
13. L. Y. Song, Y. Zhao, R. F. Du, H. Li, X. H. Li, W. Feng, J. B. Yang, X. Wen, L. Huang, Y. N. Peng, H. Sun, Y. L. Jiang, J. He, and J. P. Shi*. Coexistence of ferroelectricity and ferromagnetism in atomically thin two-dimensional Cr2S3/WS2 vertical heterostructures. Nano Lett. 2024, 24, 2408-2414.
14. J. B. Yang, L. Huang, H. Li, X. H. Li, L. Y. Song, Y. N. Peng, R. H. Xu, X. Wen, H. Sun, Y. L. Jiang, J. He, and J. P. Shi*. Understanding iron-doping modulating domain orientation and improving the device performance of monolayer molybdenum disulfide. Nano Lett. 2024, 24, 12866-12873.
15. X. Wen, Y. N. Li, Y. H. Li, Y. L. Jiang, X. H. Li, J. B. Yang, L. Y. Song, Y. N. Peng, H. Sun, L. Huang, W. Feng, and J. P. Shi*. Constructing robust interfaces in CoSe2/nitrogen-doped carbon for superior long-life sodium-ion storage. Nano Lett. 2025, 25, 1956-1963.
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